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PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA CVD METHOD
PLASMA CVD METHOD, METHOD FOR FORMING SILICON NITRIDE FILM, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND PLASMA CVD METHOD
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机译:等离子体CVD法,氮化硅膜的形成方法,半导体装置的制造方法以及等离子体CVD法
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摘要
A plasma processing apparatus is provided with a process chamber which can be vacuumized; a placing table for placing a subject to be processed in the processing chamber; a microwave generating source for generating microwaves; a planar antenna, which has a plurality of slots and introduces the microwaves generated by the microwave generating source into the process chamber through the slots; a gas supply mechanism for supplying a film forming material gas into the process chamber; and a high-frequency power supply for supplying the placing table with high-frequency power. By using such plasma processing apparatus, a nitrogen containing gasand a silicon containing gas introduced into the process chamber are brought into the plasma state, and at the time of depositing a silicon nitride film on the surface of the substrate by the plasma, the placing table is supplied with high-frequency power.
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