Nanodiamond lateral comb array field emission diode for high current applications

摘要

Nanodiamond comb-shaped lateral field emitter arrays in diode configuration were fabricated and characterized for high current field emission. Nitrogen-incorporated nanocrystalline diamond with grain size of 5 -10 nm was micropatterned using RIE to realize interconnected arrays of comb structures equipped with uniformly spaced high aspect ratio lateral emitter fingers. A 9000-fmgered nanodiamond lateral comb array diode with an inter-electrode spacing of 8 mu m demonstrated a high emission current of -25 mA at an anode voltage of 260 V (electric field-32 V/mu m) in 10~(-7) TOIT vacuum. The lateral emitter configuration shows potential for higher power with no emission current saturation observed. These vacuum microanoelectronic devices comprised of nanodiamond lateral field emission diodes are attractive for low-voltage operating high current electron sources, high-power and high-speed switches, and other extreme demand/extreme environment electronics.