Cubic boron nitride films for industrial applications

摘要

The effects of kinetic energy, chemical nature of substrates and temperature on the synthesis of cBN films are explored to obtain cBN films with industrial quality. Carbon including amorphous carbon, nanocrystalline and polycrystalline diamond enables deposition of stable, thick and adherent cBN films with characteristic Raman signature. Although temperature has been designated as an unimportant parameter, the deposition at higher temperatures yields higher quality of cBN films. The higher temperature (800 deg C) was also employed at cBN deposition on diamond coated tungsten carbide (WC) cutting inserts using plasma enhanced chemical vapor deposition (PECVD). The quality of cBN films grown by PECVD significantly overcomes that prepared by physical vapor deposition (PVD) which is affected in large extent by the lower kinetic energies of particles used in PECVD. The low kinetic energy of particles induces surface growth mechanism which differs from the growth models previously proposed.