METHOD OF MANUFACTURING CUBIC BORON NITRIDE THIN FILM HAVING REDUCED RESIDUAL COMPRESSION STRESS AND CUBIC BORON NITRIDE THIN FILM MANUFACTURED THEREBY

摘要

A method of manufacturing a cubic boron nitride (c-BN) thin film may include applying a pulse type bias voltage; and forming the c-BN thin film by making an ion collide with the substrate using the pulse type bias voltage. In this case, a ratio of an on/off duration time of the pulse type bias voltage may be adjusted to control the residual compression stress of the c-BN thin film. The residual compression stress applied to the thin film is minimized using a pulse type voltage as a negative bias voltage applied to the substrate, and the c-BN thin film is deposited in an area with low ion energy by increasing a ratio of ion/neutron by adjusting the ratio of the on/off duration time of the pulse type voltage.;COPYRIGHT KIPO 2014