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Ultra-thin carbon layer for high density magnetic storage devices

机译:用于高密度磁存储设备的超薄碳层

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Storage density is presently doubling every year. This requires the read head to approach closer to the magnetic layer, and ever-thinner layers of carbon. Film thickness below 2 nm and roughness well below 1 nm are needed for the storage of approx 1 Tb/ in~2. Here we present an analytical and functional characterisation of ultra-thin carbon nitride and pure carbon films produced by magnetron sputtering and filtered high current vacuum arc. The main focus is the effect of nitrogen composition and decreasing film thickness on the relevant mechanical and tribological properties. The carbon bonding has been monitored by using a combination of Raman spectra, taken at two wavelengths (514 and 244 nm). We show that the density, nitrogen content, scratching resistance and Young's modulus of ultra-thin films can all be monitored by the G peak dispersion. Also, the G peak full width at half maximum is a useful parameter in order to investigate the structural evolution of thin films.
机译:目前存储密度每年都在增加一倍。这就要求读取头靠近磁性层和更薄的碳层。大约1 Tb / in〜2的存储量需要2 nm以下的膜厚和1 nm以下的粗糙度。在这里,我们介绍了通过磁控管溅射和过滤后的高电流真空电弧产生的超薄氮化碳和纯碳膜的分析和功能表征。主要焦点是氮的组成和减少膜厚对相关机械和摩擦学性能的影响。通过使用在两个波长(514和244 nm)处获得的拉曼光谱的组合来监测碳键。我们表明,超薄膜的密度,氮含量,耐刮擦性和杨氏模量都可以通过G峰色散来监测。同样,半峰的G峰全宽也是研究薄膜结构演变的有用参数。

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