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XPS spectra of thin CN{sub}x films prepared by chemical vapor deposition

机译:化学气相沉积法制备的CN {sub} x薄膜的XPS光谱

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Carbon nitride (CNA) thin films with an N/C ratio of 0.605:0.522 have been synthesized using different sources as a ksilol. CCl4, N{sub}2 and NH3 by PECVD (plasma enhanced chemical vapor deposition) and hot filament-CVD reactors. X-rayphotoelectron spectroscopy (XPS) analyses, which give C{sub}1s peaks with a maximum at 285.7 eV and 287 eV, typical for C-N bonds and sp{sup}2 hybridization and C=N bonds and sp{sup}3 hybridization, respectively. The observed and N{sub}1s peaks with amaximum at about 399 eV suggest the existence of different C N bonds and polycrystallite structure in the amorphous carbide matrix. The concentration of the different CN bonds varies, depending on the deposition technique.
机译:N / C比为0.605:0.522的氮化碳(CNA)薄膜已使用不同来源的硅醇合成。通过PECVD(等离子增强化学气相沉积)和热灯丝CVD反应器制备CCl4,N {sub} 2和NH3。 X射线光电子能谱(XPS)分析,得出C {sub} 1s峰,最大为285.7 eV和287 eV,这是CN键和sp {sup} 2杂交以及C = N键和sp {sup} 3杂交的典型峰, 分别。观察到的N {sub} 1s峰最大约为399 eV,表明在非晶碳化物基质中存在不同的C N键和多晶结构。不同的CN键的浓度根据沉积技术而变化。

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