High mobility and high crystalline-quality chemical-vapor-deposition grown homoepitaxial diamond

摘要

We have grown a high-crystalline-quality homoepitaxial diamond (001) layer by using microwave plasma chemical vapor deposition. We did not detect any impurities, such as H, B, N and 0, in the homoepitaxial layer by secondary ion-mass spectroscopy. The full width at half maximum of the Raman diamond-related peak was as low as 2.35 cm{sup}(-1). The Raman results showed that in the growth temperature range, T{sub}g, from 650 to 730 ℃, local crystalline quality deteriorated with the Tg and that for T{sub}g >730 ℃, it improved with the T{sub}g. However, as the Tg was in creased to above 780 ℃, almost all the surface became covered with unepitaxial crystals, which obstructed hole conduction on the H-terminated surface. Consequently, we obtained high Hall mobility at a T{sub}g's of approximately 660 and 766 ℃. At room temperature, we obtained a Hall mobility of 814 cm{sup}2/Vs in the air.