Direct growth of c-BN on a mono-structured transition layer by plasma-enhanced chemical vapor deposition

摘要

Inductively coupled plasma-enhanced chemical vapor deposition with a time-dependent biasing techniques was applied for cubic boron nitride (c-BN) deposition on a Si substrate, and the growth mode of transition layer was investigated by high-resolution transmission electron microscopy. It was found that elimination of either an amorphous layer or a turbostratic BN (t-BN) layer was possible, and the two-layered structure, namley, direct growth of a c-BN layer on an amorphous layer or a t-BN layer on a Si substrate, was realized by pre-treatment conditions of positive bias.