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Formation and characteristics of undoped and doped tetrahedral amorphous carbon films

机译:未掺杂和掺杂的四面体非晶碳膜的形成和特性

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Synthesis of undoped and doped tetrahedral amorphous carbon (ta-C) films has been achieved using magnetic field filtered plasma stream system in an ambient gas of pure Ar and Ar with N{sub}2, respectively. The optical and electrical properties ofthese films as a function of the substrate bias voltages (V{sub}b) or nitrogen partial pressures (P{sub}N) have been studied using UV-visible optical absorption spectroscopy, Fourier-transform infra-red spectroscopy (FTIR) and measurements of electricalconductivity. The results show that ta-C films with a high sp3 fraction were formed when the V{sub}b was in the range of -10 to -50 V. The optical band gap of such ta-C films was found to be larger than 3 eV. The incorporation of nitrogen into the ta-Cfilms deposited at low P{sub}N (P{sub}N <25%), results in a slight drop in activation energy, which indicates that there is evidently some doping effect of nitrogen. The configurations of N atoms in ta-C network are identified and discussed.
机译:使用磁场过滤的等离子体流系统分别在纯Ar和带有N {sub} 2的Ar的环境气体中,已完成了未掺杂和掺杂的四面体非晶碳(ta-C)薄膜的合成。这些薄膜的光学和电学性质随衬底偏置电压(V {sub} b)或氮分压(P {sub} N)的变化,已使用紫外可见光吸收光谱法,傅里叶变换红外光谱进行了研究。光谱(FTIR)和电导率测量。结果表明,当V {sub} b在-10至-50 V范围内时,形成了具有高sp3分数的ta-C薄膜。发现这种ta-C薄膜的光学带隙大于3 eV。将氮掺入以低P {sub} N(P {sub} N <25%)沉积的ta-C膜中会导致活化能略有下降,这表明显然存在氮的掺杂作用。确定并讨论了ta-C网络中N原子的构型。

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