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Characterization of bias-controlled carbon nanotubes

机译:偏压控制的碳纳米管的表征

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In this study, we docus on the immediately mproving quality of gowing carbon nanotubes without any pre- or post-treatment. The applied biases during the reaction can directly control the diameter and the quality of carbon nanotubes. This simple step skips additional treatments and is easily used in many deposition systems. The diameter of carbon nanotubes noticeably varies from 45 nm without any amorphous carbon (under + 80V) to 120 nm (under -120V). Raman specturums indicate that I_D/I_G ratio decreases with increasign positive bias. This implies applying positive bias could enhance the graphitizaion of carbon nanotubes. However, positive and negatve bias effects slightly vary the field emission enhancement. In addition, carbon nanotubes grown under positive bias possess better field emission characterization. This results from the following reasons: (I) smaller diameter; (II) pure surface; (III) more graphitized structure; and (IV) higher field enhancement beta.
机译:在这项研究中,我们着眼于无需任何预处理或后处理就可立即改善wing割碳纳米管的质量。反应期间施加的偏压可以直接控制碳纳米管的直径和质量。这个简单的步骤跳过了额外的处理,很容易在许多沉积系统中使用。碳纳米管的直径明显变化,从无任何无定形碳(在+ 80V下)的45 nm到120 nm(在-120V下)。拉曼光谱表明,I_D / I_G比随着正偏差的增加而降低。这意味着施加正偏压可以增强碳纳米管的石墨化作用。但是,正偏压和负偏压效应会稍微改变场发射增强。此外,在正偏压下生长的碳纳米管具有更好的场发射特性。这是由于以下原因造成的:(I)直径较小; (二)表面纯净; (三)更多的石墨化结构; (IV)更高的场增强Beta。

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