Crystal orientation dependence of piezoresistivity in boron doped single crystalline diamond films

摘要

The piezoresistivity is a change in the electrical resistivity of a semiconductor when mechanical stress is applied. A number of studies of the polycrystalline diamond (PCD) piezoresistivity have been reported before. And it was examined that the shear piezoresistive coefficients in single crystalline Silicon (Si) and Germanium (Ge) are exceptionally large due to its crystal orientation anisotropy. However, the single crystalline diamond (SCD) piezoresistivity has been rarely investigated with respect to crystal orientation anisotropy. In this study, the piezoresistive coefficients pi(11), pi(12) and pi(44) of SCD were measured experimentally with the SCD piezoresistors fabricated from the boron (B)-doped SCD thin films. It was found that the coefficient pi(44) of SCD at 4.5 ppm B/C, ratio were 18.3 and 12.0 times as large as the coefficient pi(11) of that and the coefficient pi(44) of PCD, respectively. (C) 2015 Elsevier B.V. All rights reserved.