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Controlled glow to arc transition in sputtering for high rate deposition of carbon films

机译:溅射中可控的辉光到电弧过渡,可高速沉积碳膜

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We achieve control over the transition from a magnetically confined (magnetron) glow discharge to an arc discharge operating on a carbon cathode by applying constant voltage square wave pulses. A power supply with rapid turn off at a chosen current set point is used to produce a mode with a high current magnetron discharge and no arc (the high power impulse magnetron sputtering or HIPIMS mode) or a high current magnetron discharge that includes a short lived cathodic arc with very high but controlled current density (mixed HIPIMS arc mode). The deposition rate in the mixed HIPIMS arc mode at a duty factor of less than 1% was found to be greater than for conventional r.f. sputtering. We have studied the properties of carbon films deposited using both modes. In the mixed mode, the films contain graphitic nanoclusters with a number density and a morphology that depends on the bias applied to the substrate. The nanoclusters in the films prepared with bias have a flattened shape with graphitic layers approximately parallel to the surface, consistent with energetic impact of a spherical cluster of graphitic material. The matrix of the films has a sp3 content of approximately 50%, significantly greater than that for a conventionally sputtered film, but with a much higher instantaneous deposition rate. For negative substrate bias values of greater than 80 V, the surface is smooth enough to make films of interest as wear resistant coatings.
机译:通过施加恒定电压的方波脉冲,我们可以控制从磁约束(磁控管)辉光放电到在碳阴极上运行的电弧放电的过渡。在选定的电流设定点具有快速关闭功能的电源可用于产生具有高电流磁控管放电且无电弧的模式(高功率脉冲磁控管溅射或HIPIMS模式)或具有短寿命的高电流磁控管放电阴极电弧,电流密度很高,但可控(混合HIPIMS电弧模式)。发现在混合HIPIMS电弧模式下,占空因数小于1%时的沉积速率大于传统的r.f。溅射。我们已经研究了使用两种模式沉积的碳膜的特性。在混合模式下,薄膜包含石墨纳米团簇,其数量密度和形态取决于施加到基材上的偏压。用偏压制备的膜中的纳米团簇具有平坦的形状,其石墨层大致平行于表面,这与石墨材料的球形簇的高能冲击相一致。薄膜的基体的sp3含量约为50%,明显大于常规溅射薄膜的sp3含量,但瞬时沉积速率更高。对于大于80 V的负基板偏置值,表面足够光滑,可以制成所需的薄膜作为耐磨涂层。

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