Calculation of sputtered materials deposition on the substrate during thin films sputtering in asymmetric glow AC discharge

摘要

Diffusion transport of material sputtered from a target in the asymmetric alternating current gas discharge is calculated. Analytical expressions for the flow densities of the sputtered material at the target and at the substrate are obtained. It is found that a background gas pressure decrease results in a reduction of the sputtered atoms flow non-stationarity.