Piezoresistivity of P-type heteroepitaxial diamond films on Si(100)

摘要

The piezoresistive effect of p-type heteroepitaxial diamond films was investigated. The filmswere grown by microwave plasma chemical vapor deposition and in situ boron doping was performedby cold ion implantation and rapid thermal annealing. The strain gauge was made by ion etching in anoxygen plasma. The gauge factor for the heteroepitaxial p-type diamond films at 100 microstrain wasfound to be 1200 at room temperature and was 980 even at 200℃, greatly exceeding that ofpolycrystalline diamond films. The gauge factor did not change after pure acid treatment for up to 8 h,and little variation was found under ion irradiation.