Texture Analysis of CoGe2 Alloy Films Grown Heteroepitaxially on GaAs(100) UsingPartially Ionized Beam Deposition

摘要

Reflection X-Ray pole figure analysis techniques were used to study theheteroepitaxial relationships of the cobalt germanide CoGe2 to GaAs(100). The alloy films were grown using the partially ionized beam deposition technique, in which low energy Ge(+) ions are used to alter the heteroepitaxial orientation of the CoGe2 deposits.