Semiconducting behavior of type-I Si clathrate K_8Ga _8Si_(38)

Imai M.; Sato A.; Udono H.; Imai Y.; Tajima H.

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Semiconducting behavior of type-I Si clathrate K_8Ga _8Si_(38)

机译：I型Si笼形物K_8Ga _8Si_（38）的半导体行为

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A ternary type-I Si clathrate K_8Ga_8Si_(38) has been revealed to be an indirect band gap semiconducting material with an energy gap (E_g) of approximately 0.10 eV, which is much smaller than the calculated E_g value that is 0.15 eV wider than E_g of elemental Si with the diamond-type structure.

机译：已经发现三元I型Si笼形物K_8Ga_8Si_（38）是一种间接带隙半导体材料，其能隙（E_g）约为0.10 eV，远小于计算出的E_g值，该E_g值比E_g宽0.15 eV具有菱形结构的元素硅。

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《Dalton transactions: An international journal of inorganic chemistry》 |2011年第16期|共3页
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Imai M.; Sato A.; Udono H.; Imai Y.; Tajima H.;
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1. Semiconducting behavior of type-I Si clathrate K_8Ga _8Si_(38) [J] . Imai M., Sato A., Udono H., Dalton transactions: An international journal of inorganic chemistry . 2011,第16期

机译：I型Si笼形物K_8Ga _8Si_（38）的半导体行为
2. Synthesis and structures of type-I clathrates: Rb6Na2Ge44.89(1), Cs6Na2Zn4Ge42 and Cs6.40(1)Na1.60(1)Ga8Ge38 [J] . Zhang Hui, Mu Gang, Huang Fuqiang, Journal of Solid State Chemistry . 2016,第Pta1期

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Semiconducting behavior of type-I Si clathrate K_8Ga _8Si_(38)

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