Effect of HCl addition on the crystalline fraction in silicon thin films prepared by hot-wire chemical vapor deposition

摘要

In an effort to increase the crystalline fraction of silicon films directly deposited on a glass substrate by hot-wire chemical vapor deposition, the effect of HCl addition was studied. The silicon film was deposited on a glass substrate at 320 degrees C under a reactor pressure of 1333 Pa at the wire temperature of 1600 degrees C with 10%SiH4-90%He at a fixed flow rate 100 standard cubic centimeter per minute (sccm) and HCl varied at 0, 10, 16 and 28 sccm. With increasing HCl, the crystalline fraction of silicon was increased as revealed by Raman spectra but the growth rate was decreased.