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The effects of substrate temperature on the structure and properties of ZnO films prepared by pulsed laser deposition

机译:衬底温度对脉冲激光沉积制备ZnO薄膜结构和性能的影响

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ZnO thin films were prepared by pulsed laser deposition (PLD) on glass substrates with growth temperature from room temperature (RT) to 500 degrees C. The effects of substrate temperature on the structural and optical properties of ZnO films have been investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission spectra, and RT photoluminescence (PL) measurements. The results showed that crystalline and (0 0 2)-oriented ZnO films were obtained at all substrate temperatures. As the substrate temperature increased from RT to 500 degrees C, the ratio of grain size in height direction to that in the lateral direction gradually decreased. The same grain size in two directions was obtained at 200 degrees C, and the size was smallest in all samples, which may result in maximum E, and E-0 of the films. UV emission was observed only in the films grown at 200 degrees C, which is probably because the stoichiometry of ZnO films was improved at a suitable substrate temperature. It was suggested that the UV emission might be related to the stoichiometry in the ZnO film rather than the grain size of the thin film. (c) 2007 Elsevier Ltd. All rights reserved.
机译:ZnO薄膜是通过在玻璃基板上从室温(RT)到500摄氏度的生长温度通过脉冲激光沉积(PLD)制备的。通过X射线研究了基板温度对ZnO薄膜的结构和光学性能的影响衍射(XRD),扫描电子显微镜(SEM),透射光谱和RT光致发光(PL)测量。结果表明,在所有衬底温度下均获得了晶体和(0 0 2)取向的ZnO薄膜。随着基板温度从RT升高到500℃,高度方向上的晶粒尺寸与横向方向上的晶粒尺寸的比率逐渐减小。在200摄氏度下在两个方向上获得了相同的晶粒尺寸,并且在所有样品中尺寸均最小,这可能导致薄膜的最大E和E-0。仅在200摄氏度下生长的薄膜中观察到UV发射,这可能是因为ZnO薄膜的化学计量比在合适的基板温度下得以改善。有人认为,紫外线发射可能与ZnO薄膜的化学计量有关,而不是薄膜的晶粒大小。 (c)2007 Elsevier Ltd.保留所有权利。

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