首页> 外文期刊>Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology >Surface electronic structure investigations of CdTe and Cd{sub}0.98Fe{sub}0.02Te via the surface photovoltage spectroscopy method
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Surface electronic structure investigations of CdTe and Cd{sub}0.98Fe{sub}0.02Te via the surface photovoltage spectroscopy method

机译:通过表面光电压光谱法研究CdTe和Cd {sub} 0.98Fe {sub} 0.02Te的表面电子结构

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摘要

Surface electron properties investigations have been carried out for the triple compound Cd{sub}0.98Fe{sub}0.02Te with a modified Kelvin method of the surface photovoltage measurement with a constant illumination. Measurements of the surfacephotovoltage spectroscopy (SPS) have been performed in the temperature range between 140 and 300 K at the pressure of 10{sup}-5Pa. For comparison, similar investigations have been carried out for high-purity CdTe crystals. The measurements have been donefor the surface polished and cleaved in a vacuum of 10{sup}-8 Pa. From the changes of their surface photovoltage as a function of the wavelength of the incident illumination, the energy values of the electron levels E{sub}t1, E{sub}t2, E{sub}t3, E{sub}t4and E{sub}Fe, have been determined. The E{sub}Fe, level (0.95 eV above E{sub}v) is connected with the introduction of iron into the CdTe matrix. The surface potential barrier value and its change with temperature has been determined. The energetic schemes of the CdTe and Cd{sub}0.98Fe{sub}0.02Te surface layer are presented.
机译:已经对三化合物Cd {sub} 0.98Fe {sub} 0.02Te进行了表面电子性质研究,采用改进的Kelvin方法进行了恒定光照下的表面光电压测量。表面光电压光谱法(SPS)的测量已经在140和300K之间的温度范围内在10 {-5Pa的压力下进行。为了进行比较,对高纯度的CdTe晶体进行了类似的研究。已经对在10 {sup} -8 Pa的真空中抛光和分裂的表面进行了测量。根据表面光电压随入射照明波长的变化,电子能级E {sub已确定} t1,E {sub} t2,E {sub} t3,E {sub} t4和E {sub} Fe。 E {sub} Fe水平(比E {sub} v高0.95 eV)与将铁引入CdTe基体有关。已经确定了表面势垒值及其随温度的变化。提出了CdTe和Cd {sub} 0.98Fe {sub} 0.02Te表面层的能量方案。

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