Effects of the annealing atmosphere on the electrical properties of low-power pulsed-laser annealed Zn-implanted InP

摘要

The effects of N{sub}2 annealing atmosphere on implanted and low-power pulsed-laser annealed (LPPLA) InP matrix are discussed. The analyses were performed, by using several complementary techniques such as RBS, Raman spectroscopy, SIMS and electrical measurements. It has been demonstrated that in suitable annealing conditions, namely nitrogen ambient, it is possible to achieve a complete reordering of the damaged structure and a very high electrical carrier activation (～80%). In this paper, the contribution of the nitrogen atoms to the mechanism affecting the electrical characteristic of the implanted and laser annealed samples is discussed.