Sub-quarter micron metallization using ionized metal plasma (IMP) technology

摘要

Ionized metal plasma (IMP) technology has been developed for liners and wetting layer deposition of sub-quarter-micron devices. Numerical modeling showed the unique advantages of IMP source over ECR source and long throw sputtering in enhancingbottom coverage. TiN bottom coverage up to 70% were demonstrated. The deposition rate, uniformity, bottom coverage and film stress were optimized by tuning rf and dc powers, process pressure and bias power. The TiN film microstructure such as crystalorientation and grain size was controlled by process parameters. An IMP TiN{sub}x (x <1, a sub-stoichiometric TiN) film pro vided superb wetting layer for low temperature aluminum plug process, and high aspect ratio contact holes were filled by using theIMP TiN{sub}x wetting layer. The via resistance was improved. by IMP Ti deposition.