A Design of CMOS RF Band Pass Amplifier Using High-Q Active Inductor Loads with Binary Code for Multi-Band Applications

摘要

In this paper, a CMOS radio frequency (RF) band-pass amplifier using a high-Q active inductor load with a binary code band selector suitable for multi-standards wireless applications is proposed. By employing the improved high-Q active inductor including two bits binary controlled code, the RF multi-band amplifier operating at four different frequency bands is realized. The improved active inductor and the proposed amplifier circuit is designed in TSMC 0.18-um CMOS technology. Based on the simulation results, the improved active inductor can achieve high Q value around 1E8 and the proposed amplifier can operate at 900MHz, 1.8GHz, 2.4GHz, and 3.6GHz with forward gain (S{sub}21) of 21.9 dB, 21.9dB, 21.8dB, and 12.5 dB, respectively. Furthermore, the power dissipation of this amplifier can retain constant at all operating frequency bands and consume around 5.27 mW from 1.8-V power supply. The small occupied chip area 158 × 76 mm{sup}2 is achieved.