A Radio Frequency CMOS Band Pass Amplifier Using High-Q Active Inductor Loads with Binary Code for Multi-Band Selecting

摘要

In this paper, a CMOS radio frequency (RF) multi-band band-pass amplifier using a high-Q active inductor load with a binary code band selector suitable for multi-standards wireless applications is proposed. By employing the improved high-Q active inductor including two bits binary controlled code, the RF multi-band amplifier operating at four different frequency bands is realized. The proposed amplifier circuit is designed in TSMC 0.18-μm CMOS technology. Based on the simulation results, the amplifier can operate at 900 MHz, 1.8 GHz, 2.4 GHz, and 3.6 GHz with forward gain (S{sub}21) of 21.9 dB, 21.9 dB, 21.8 dB, and 12.5 dB, respectively. Furthermore, the power dissipation of this amplifier can retain constant at all operating frequency bands and consume around 5.27 mW from 1.8-V power supply.