High-Temperature Characteristics of Ti/Al/Ni/Au Ohmic Contacts to n-GaN

摘要

We present the high-temperature characteristics of Ti/Al/Ni/Au(15 nm/220 nm/40 nm/50 nm) multiplayer contacts to n-type GaN (N-d = 3.7 x 10(17) cm(-3), N-d = 3.0 x 10(18) cm(-3)). The contact resistivity increases with the measurement temperature. Furthermore, the increasing tendency is related to doping concentration. The higher the doped, the slower the contact resistivity with decreasing measurement temperature. Ti/Al/Ni/Au ohmic contact to heavy doping n-GaN takes on better high temperature reliability. According to the analyses of XRD and AES for the n-GaN/Ti/Al/Ni/Au, the Au atoms permeate through the Ni layer which is not thick enough into the Al layer even the Ti layer.