Synthesis of GaN nanorods by ammoniating Ga2O3/ZnO films

摘要

Large quantities of GaN nanorods are successfully synthesized on Si(111) substrates by ammoniating the films of Ga2O3/ZnO at 950 degrees C in a quartz tube. The structure, morphology and optical properties of the as-prepared GaN nanorods are studied by x-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, Fourier transform infrared spectroscopy, and photoluminescence. The results show that the GaN nanorods have a hexagonal wurtzite structure with lengths of several micrometers and diameters from 80 nm to 300 nm, which could supply an attractive potential to harmonically incorporate future GaN optoelectronic devices into Si-based large-scale integrated circuits. The growth mechanism is also briefly discussed.