High quality one-dimensional GaN structure was synthesized via Chemical-Vapor-Deposition method with gold film as catalyst by ammoniating Ga2 O3 and metal Ga mixture. SEM, XRD and TEM were used to characterize the morphology, the microstructure of the GaN nanowires samples. The optical properties which were studied by measurements of the photoluminescence showed that the samples are high quality GaN nanowires with little defects. By changing the key factors such as the the mixture of' Ga source, the temperature,the distance hetween the Ga and wafers different morphology of GaN nanowires were analyzed. And the growing mechanisms helong to the VLS mode by which the best situations for the syntheses of GaN namowires were ohtained.%在管式炉中用化学气相沉积(CVD)法在高温下用金做催化剂,首次通过氨化Ga2O3和金属Ga粒组成的混合镓源制备出高质量的GaN纳米线.运用SEM,TEM,XRD以及Ramah,PL等表征手段分析了氮化镓纳米线的形貌、结构以及发光性质.最后着重探讨了通过改变镓源的构成、氨化温度以及镓源和生长衬底间的距离等生长条件,研究了其对氮化镓形貌的影响,藉以提高在管式炉中生长GaN的可控性及可重复性,为制备大量GaN纳米线提供了依据.
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