GROWING METHOD OF GaN NANO-WIRES BY USING AN Au CATALYST LAYER CAPABLE OF INDUCING VERTICAL GROWTH OF GaN NANO-WIRES INTO FIXED THICKNESS AND GROWTH LENGTH

摘要

PURPOSE: A growing method of GaN nano-wires by using an Au catalyst layer is provided to adjust size of nano-wires by adjusting size of Au-Ga droplets.;CONSTITUTION: A growing method of GaN nano-wires by using an Au catalyst layer comprises the following steps: forming an Au catalyst layer on a semiconductor substrate; forming a Ga thin film layer on the Au catalyst layer; forming Au-Ga droplets by annealing the semiconductor substrate; and providing carrier gas, TMIn and NH3 to the semiconductor substrate by using MOCVD method in order to grow GaN nano-wires. The first step uses one selected from DC Sputter, E-beam evaporation, Thermal evaporation and Electroplating. In the second step, carrier gas and TMGa are provided into the MOCVD chamber. The second step is processed at 500-700 deg. Celsius for 10-100 seconds. The third step is processed at 50-750 deg. Celsius for 5-20 minutes. In the fourth step, TMGa and NH3 are respectively provided as 0.2-0.8sccm and 2-3slm.;COPYRIGHT KIPO 2013