Improvement of electrical properties of the Ge2Sb2Te5 film by doping Si for phase-change random access memory

摘要

Si-doped Ge(2)sb(2)Te(5) films have been prepared by dc magnetron co-sputtering with Ge2Sb2Te5 and Si targets. The addition of Si in the Ge(2)sb(2)Te(5) film results in the increase of both crystallization temperature and phase-transition temperature from face-centred-cubic (fcc) phase to hexagonal (hex) phase. The resistivity of the Ge2Sb2Te5 film shows a significant increase with the Si doping. When doping 11.8 at.% of Si in the film, the resistivity after 460 degrees C annealing increases from 1 to 11 m Omega(.)cm and dynamic resistance increase from 64 to 99 Omega compared to the undoped Ge2Sb2Te5 film. This is very helpful to writing current reduction of phase-change random access memory.