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Diffusion of cobalt in diamond films synthesized by combustion flame method

机译:燃烧火焰法合成金刚石薄膜中钴的扩散

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摘要

It is well known that Cobalt (Co) plays an important role during diamond deposition on cemented carbide substrates (WC). The presence of cobalt on the substrate lead to decrease adhesion and increase the formation of non-diamond compounds phases. However, the diffusion phenomenon of cobalt in diamond coatings is not well understood. We have carried out a detailed study to investigate the diffusion of cobalt during the nucleation and growth of diamond on WC-Co substrate by combustion-flame method, and the influence of it on the structure and quality of the diamond coatings. At high substrate temperature T_s > 800 deg C, ball-sharp of cobalt with a ball size about 0.7 mu m was observed on the top surface of diamond coatings (thickness >50 mu m). The constraints in the coating are very high, the Raman peak appearance at 1341.1 cm~(-1). At relatively low substrate temperature, T_s is about 550 deg C, ball sharp of cobalt was not observed by MEB but a lot of cobalt particles dissolution carbon films were detected by EDX. Based on the above results, the influence of cobalt on the structure, the quality and the constraints in the diamond films are discussed, a model suggesting the nucleation and growth mechanisms of diamond, to explain the cobalt diffusion in diamond films, is presented.
机译:众所周知,钴(Co)在硬质合金基体(WC)上的金刚石沉积过程中起着重要作用。基材上钴的存在会导致粘合力降低并增加非金刚石化合物相的形成。然而,人们对钴在金刚石涂层中的扩散现象还没有很好的了解。我们已经进行了详细的研究,以燃烧-火焰法研究在WC-Co基体上金刚石成核和生长过程中钴的扩散,以及钴对金刚石涂层结构和质量的影响。在较高的基材温度Ts> 800℃时,在金刚石涂层的顶面上观察到球直径约为0.7微米的钴的球状锋利(厚度> 50微米)。涂层的约束非常高,拉曼峰出现在1341.1 cm〜(-1)。在相对较低的基板温度下,T_s约为550℃,MEB未观察到钴的球形锐利,而EDX检测到许多钴颗粒溶解碳膜。基于以上结果,讨论了钴对金刚石膜的结构,质量和约束的影响,提出了表明金刚石成核和生长机理的模型,以解释钴在金刚石膜中的扩散。

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