Proton-induced bremsstrahlung radiation in the 1-5 keV energy range has been used to estimate the silicon dead layer thickness in a Si(Li) detector. This novel technique does not require accurate bremsstrahlung cross sections with x-ray energy; it just assumes these cross sections and hence the efficiency corrected yield is both smooth and continuous across the Si K edge at 1.838 keV. Copyright (C) 2008 John Wiley & Sons, Ltd.
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机译:1-5 keV能量范围内的质子诱导的ms致辐射已被用于估计Si(Li)检测器中的硅死层厚度。这项新颖的技术不需要具有X射线能量的精确致辐射横截面;它只是假设这些横截面,因此效率校正后的产率在1.838 keV的Si K边缘上既平滑又连续。版权所有(C)2008 John Wiley&Sons,Ltd.
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