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Effects of film thickness and microstructures on residual stress

机译:膜厚和微观结构对残余应力的影响

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摘要

The accurate measurement of stress is an essential requirement of residual stress studying. In this paper, Cu thin films with different thickness were prepared by magnetron sputtering. The micromorphologies of the films were observed using atomic force microscopy, and the microstructures were analysed by transmission electronmicroscopy and X-ray diffraction. The residual stress distributions of the films were measured by the curvature and nano indentation methods. The results show that Cu films present polycrystalline state, and the grains size grew up with increasing film thickness. The residual stress calculation results from nanoindentation tests using the Suresh model were consistent with the curvature method, the residual compressive stress changed into residual tensile stress and the D values (the difference between the maximum and minimum stress value) decreased with increasing film thickness, and the stress distribution became uniform. The interface stress of the films weakened with the film thickness increasing because the crystalline grains grew larger.
机译:应力的准确测量是残余应力研究的基本要求。本文通过磁控溅射制备了不同厚度的铜薄膜。使用原子力显微镜观察膜的微观形态,并通过透射电子显微镜和X射线衍射分析微观结构。膜的残余应力分布通过曲率和纳米压痕法测量。结果表明,Cu膜呈多晶状态,晶粒尺寸随膜厚的增加而增大。使用Suresh模型进行的纳米压痕测试的残余应力计算结果与曲率方法一致,残余压应力变为残余拉伸应力,并且D值(最大应力值和最小应力值之差)随着膜厚度的增加而减小,并且应力分布变得均匀。膜的界面应力随着膜厚的增加而减弱,因为晶粒长大了。

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