首页> 外国专利> Method for estimating residual film thickness distribution, method for designing mask for patterning using method for estimating residual film thickness distribution, and method for designing semiconductor device using mask for patterning designed using method for estimating residual film thickness distribution Production method

Method for estimating residual film thickness distribution, method for designing mask for patterning using method for estimating residual film thickness distribution, and method for designing semiconductor device using mask for patterning designed using method for estimating residual film thickness distribution Production method

机译:估计残留膜厚度分布的方法,使用估计残留膜厚度分布的方法设计用于图案化的掩模的方法以及使用使用估计残留膜厚度分布的方法设计的用于图案化掩模的半导体器件的设计方法

摘要

A method for estimating relative remaining film thickness distribution (CMP pattern ratio distribution) among sparse and dense active regions after CMP on the basis of the layout of a mask pattern in a one-chip mask region. In each mask pattern, a reduced region is created by removing an area of a predetermined width from the mask pattern along the edge of the mask pattern. Then, the one-chip mask region is segmentalized into predetermined regions to create a plurality of segmentalized regions. On each of the segmentalized regions, the area ratio of all reduced regions occupying a region that includes a segmentalized region at a fixed position and has the same size and shape as those of the foregoing one-chip mask region is acquired. Based on the acquired area ratio, the distribution of remaining film thickness of a surface protection film in the one-chip mask region, i.e., the CMP pattern ratio, is acquired.
机译:一种基于单芯片掩模区域中的掩模图案的布局来估计CMP之后的稀疏和致密有源区域之间的相对剩余膜厚度分布(CMP图案比率分布)的方法。在每个掩模图案中,通过沿着掩模图案的边缘从掩模图案去除预定宽度的区域来创建减小的区域。然后,将单芯片掩模区域分割成预定区域以创建多个分割区域。在每个分割区域上,获得所有缩小区域的面积比,该缩小区域占据了包括在固定位置处的分割区域并且具有与前述单芯片掩模区域相同的尺寸和形状的区域的区域。基于所获得的面积比,获得单芯片掩模区域中的表面保护膜的剩余膜厚度的分布,即,CMP图案比。

著录项

  • 公开/公告号JP3553053B2

    专利类型

  • 公开/公告日2004-08-11

    原文格式PDF

  • 申请/专利权人 沖電気工業株式会社;

    申请/专利号JP20020219979

  • 发明设计人 森田 毅;

    申请日2002-07-29

  • 分类号H01L21/76;

  • 国家 JP

  • 入库时间 2022-08-21 23:27:22

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