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Studies of degradation behaviors of poly (3-hexylthiophene) layers by X-ray photoelectron spectroscopy

机译:X射线光电子能谱研究聚(3-己基噻吩)层的降解行为

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摘要

Degradation behaviors of poly(3-hexylthiophene-2,5-diyl) (P3HT) layers on NiO in the presence of H_2O at ambient pressure and dark conditions were studied using X-ray photoelectron spectroscopy (XPS). Upon H_2O exposure at 120 °C, partial oxidation of P3HT together with molecular water incorporation, but with the maintained local ring-structure, were deduced by XPS. Valence band spectra of XPS evidenced that the partial oxidation of P3HT local structure could alter π-conjugation systems of P3HT layers, forming additional electronic states close to its original highest occupied molecular orbital. For comparison, P3HT surface was also exposed to O_2, and no change in the S 2p and C 1s spectra was found by O_2 exposure at 120 °C, implying that H_2O plays a major role at the initial stage of P3HT oxidation.
机译:利用X射线光电子能谱(XPS)研究了H_2O存在下在环境压力和黑暗条件下,NiO上的3-3-己基噻吩-2,5-二基(P3HT)层的降解行为。在120°C下暴露于H_2O时,通过XPS可以推断P3HT的部分氧化以及分子水的结合,但具有维持的局部环结构。 XPS的价带谱表明,P3HT局部结构的部分氧化可改变P3HT层的π共轭体系,形成接近其最初最高占据分子轨道的附加电子态。为了进行比较,P3HT表面也暴露于O_2,并且在120°C下通过O_2暴露未发现S 2p和C 1s光谱发生变化,这表明H_2O在P3HT氧化的初始阶段起主要作用。

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