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Highly enhanced mechanical stability of indium tin oxide film with a thin Al buffer layer deposited on plastic substrate

机译:在塑料基板上沉积有一层薄Al缓冲层的铟锡氧化物薄膜的机械稳定性大大提高

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We here report that the mechanical stability of indium tin oxide ([TO) film deposited on the plastic substrate can be highly enhanced by a thin metal buffer layer with a minimized loss of transparency. Neither cracks nor fragmentation was observed for a 75 nm-thick ITO film with a 5 nm-Al layer even after severe bending to a radius of curvature of 1.25 mm, while a 160 nm-ITO film of similar surface resistance was cracked at 9 mm. The improved crack resistance is accounted for by the fact that the effective elastic mismatch between the film and the substrate can be alleviated with a ductile buffer layer, thus the crack propagation is suppressed.
机译:我们在这里报告说,可以通过薄的金属缓冲层来最大程度地提高沉积在塑料基板上的铟锡氧化物(TO)膜的机械稳定性,同时将透明度损失降至最低。即使在严重弯曲到1.25 mm的曲率半径后,对于具有5 nm-Al层的75 nm厚的ITO膜,也没有观察到裂纹或破裂,而在9 mm处破裂了具有类似表面电阻的160 nm-ITO膜。可以通过延展性的缓冲层来减轻膜与基板之间的有效的弹性不匹配,从而抑制了裂纹的扩展,从而提高了抗裂性。

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