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Comparison between nanoindentation and scratch test hardness (scratch hardness) values of copper thin films on oxidised silicon substrates

机译:氧化硅衬底上铜薄膜的纳米压痕和划痕测试硬度(划痕硬度)值的比较

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In this paper we measured for the first time the scratch hardness of copper thin films and compared this with hardness measured from nanoindentation. Copper films with thicknesses in the range 100 nm to 500 nm were deposited by rf magnetron sputtering on silicon substrates. Scratch hardness was determined by CSM (TM) scratch tester using scratch widths at low loads. The measured hardness values were compared with conventional nanoindentation hardness measurement by CSM (TM) nanohardness tester. At these low indentation depths there is a good correlation between the scratch hardness and the nanoindentation hardness, with an increase in hardness as the film thickness decreases. (c) 2006 Elsevier B.V All rights reserved.
机译:在本文中,我们首次测量了铜薄膜的划痕硬度,并将其与纳米压痕测得的硬度进行了比较。通过射频磁控溅射在硅衬底上沉积厚度为100 nm至500 nm的铜膜。划痕硬度由CSM TM划痕测试仪使用低负荷下的划痕宽度确定。将测量的硬度值与通过CSM TM纳米硬度测试仪的常规纳米压痕硬度测量进行比较。在这些低的压痕深度处,在划痕硬度和纳米压痕硬度之间具有良好的相关性,并且随着膜厚度的减小硬度增加。 (c)2006 Elsevier B.V保留所有权利。

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