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首页> 外文期刊>Surface & Coatings Technology >Deposition of superhard nanolayered TiCrAlSiN thin films by cathodic arc plasma deposition
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Deposition of superhard nanolayered TiCrAlSiN thin films by cathodic arc plasma deposition

机译:阴极电弧等离子体沉积超硬纳米层TiCrAlSiN薄膜的沉积

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摘要

Thin films of TiCrAlSiN were deposited on SKD 11 toot steel substrate using TiCr and AN cathodes by a cathodic arc plasma deposition system. The influence of nitrogen pressure, AlSi cathode arc current and bias voltage on the mechanical and structural properties of the films were investigated. The hardness of the films increased with the increase of the nitrogen pressure from 0.4 Pa to 4 Pa. A further increase in pressure decreased the film hardness. The hardness of the films increased as the AN cathode arc current was raised from 40 A to 45 A, and then decreased with further increase of the current. The film hardness increased rapidly from 0 V to - 100 V. It then leveled off with a further increase of the bias voltage. The films exhibited a maximum hardness of 43 GPa.
机译:使用TiCr和AN阴极,通过阴极电弧等离子体沉积系统将TiCrAlSiN薄膜沉积在SKD 11碳钢基底上。研究了氮气压力,AlSi阴极电弧电流和偏压对薄膜力学性能和结构性能的影响。膜的硬度随着氮气压力从0.4 Pa增加到4 Pa而增加。压力的进一步增加降低了膜的硬度。膜的硬度随着AN阴极电弧电流从40 A增加到45 A而增加,然后随着电流的进一步增加而降低。薄膜硬度从0 V迅速增加到-100V。然后随着偏置电压的进一步增加而趋于平稳。该膜表现出43 GPa的最大硬度。

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