Studies of the evolution of the topography of selected materials as a function of etching in reactive and non-reactive rf plasmas (vol 97, pg 151, 1997)

摘要

Examples of the evolution of the topography of selected materials (synthetic graphite, molybdenum disulphide and muscovite mica) as a function of reactive (in oxygen) and nonreactive (in argon) etching in a 13.56 MHz plasma are considered. The dependence of the observed topography and its regular and semi-regular characteristic details on the power levels, gas pressures and treatment times is demonstrated, particularly at sub-micron scales. The topographical images, derived roughness and other data (obtained variously using scanning tunnelling microscopy and atomic force microscopy) are discussed with respect to the layer lattice structure of the materials processed. (C) 1998 Published by Elsevier Science S.A. [References: 5]