Preparation of multi-layer carbon nitride film by alternate processes of magnetron sputtering and ion beam implantation

摘要

Multi-layer carbon nitride films have been deposited onto Si(100) substrates by an alternate process of DC magnetron sputtering and nitrogen ion beam (N{sup}+/N{sub}2{sup}+) implantation at ion energies from 0.5 to 10 keV. Depth profile studies by X-ray photoelectron spectroscopy (XPS) showed that it is possible to control the layer structure by regulating sputtering time and ion beam energy in the alternate process. Two different films were fabricated and compared. The first one is a multi-layer film of carbon and carbon nitride and the other is a homogeneous layer film of carbon nitride. Fourier transform infrared (FT-IR) spectroscopy studies showed a broad absorption band of approximately 1000-1700 cm{sup}(-1) due to C=C, C=N, C-C and C-N, and very little peak at 2200 cm{sup}(-1) due to C≡N in each film. Nanoindentation studies revealed that the hardness of non-uniform multi-layer films of carbon and carbon nitride was higher than that of uniform carbon nitride films.