Bonding configuration and electrical properties of nitrogen and fluorine incorporated SIOC : H thin film prepared by plasma enhanced chemical vapor deposition

摘要

in this study, the organosilicate glass (OSG) incorporated with nitrogen and fluorine (N-F:OSG) was investigated by examining the bonding configuration, refraction index, modulus, permittivity and breakdown field strength. The results of Fourier transform infrared spectroscopy show that Si-O, Si-C, Si-N, and Si-F are the major bonding in the N-F:OSG films. The XPS analysis shows that the Si 2p, F 1s, and N 1s core levels of the N-F:OSG film shifts to higher binding energy due to the neighborhood bonding of higher electronegative elements. For electrical properties, the permittivity and breakdown stress of the N-F:OSG are comparable with the OSG film accompanied with superior mechanical hardness to the OSG film. (c) 2005 Elsevier B.V. All rights reserved.