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Characterization of microstructure and precipitation behavior in Al-4Cu-xTiB_2 in-situ composite

机译:Al-4Cu-xTiB_2原位复合材料的微观结构和析出行为表征

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Al-4Cu-xTiB_2 (x=0, 2.5, 5, 10 wt %) in-situ composites were prepared by a mixed salt route technique. The composites were characterized by X-ray diffraction techniques, to confirm that no Al_3Ti has formed, which is the advantage of mixed salt route technique. The scanning electron microscopy (SEM) analysis was carried out to determine the size distribution of TiB_2 particles in the matrix. The results showed that there was no agglomeration of TiB_2 particles throughout the matrix. The differential scanning calorimerty (DSC) studies were performed on the alloys as well as on composites to identify and characterize the precipitation sequence G.P.(I)->G.P.(II)/theta"-> theta' -> stable theta. To understand the precipitation kinetics of these precipitates in the presence of TiB_2, the solutionized samples were heat treated at different temperatures of precipitation as indicated by the DSC Thermogram and subsequently quenched to room temperature to retain the precipitates that form at corresponding high temperatures. The TEM analysis was carried out to characterize the crystal structure and morphology of the different precipitates. The analysis suggested that the precipitation occur primarily on the dislocations in the matrix as well as in the TiB_2 particle/ Al-Cu matrix interface dislocations. It is believed that these dislocations are generated to accommodate the strain due to the difference in the coefficient of thermal expansion (CTE) of the TiB_2 particles and the Al-Cu matrix. TEM results displayed that the interface contained large amount of dislocations which may possibly accelerate the precipitation sequence.
机译:通过混合盐路线技术制备Al-4Cu-xTiB_2(x = 0、2.5、5、10wt%)原位复合材料。通过X射线衍射技术对复合材料进行表征,以确认没有形成Al_3Ti,这是混合盐路线技术的优势。进行扫描电子显微镜(SEM)分析以确定基质中TiB_2颗粒的尺寸分布。结果表明,整个基质中没有TiB_2颗粒的团聚。对合金及复合材料进行了差示扫描量热(DSC)研究,以鉴定和表征沉淀序列GP(I)-> GP(II)/ theta“-> theta'->稳定theta。在TiB_2存在下这些沉淀物的沉淀动力学,将溶液化的样品在不同的沉淀温度下进行热处理(如DSC热谱图所示),然后淬火至室温,以保留在相应的高温下形成的沉淀物。分析表明,沉淀主要发生在基体以及TiB_2颗粒/ Al-Cu基体界面位错的位错上,这些位错是由位错产生的。以适应由于TiB_2颗粒的热膨胀系数(CTE)的不同而引起的应变,并且Al-Cu基体。透射电镜结果表明,该界面存在大量位错,可能加速了析出序列。

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