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Tunneling study on electronic band structure of PEO/TaS2 layered nanocomposites

机译:PEO / TaS2层状纳米复合材料电子能带结构的隧穿研究

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Electronic band structures near the Fermi level of PEO/TaS2 layered nanocomposites have been studied by tunneling spectroscopy. PEO/TaS2 layered nanocomposites were synthesized by using the exfoliation-adsorption technique. Single crystals of 1T-, 2H-, and 4Hb-TaS2 were used as host materials. The tunneling spectra of 1T- and 4Hb-TaS2 single crystals show clear charge density wave (CDW) structures. The CDW gaps disappear in the tunneling spectra of PEO/IT- and PEO/4Hb-TaS2 nanocomposites. It is found that the electronic band structures of PEO/1T-TaS2 and PEO/4Hb-TaS2 nanocomposites are metallic, while that of PEO/2H-TaS2 nanocomposites is semiconductor-like with large band gap. (c) 2006 Elsevier Ltd. All rights reserved.
机译:已经通过隧穿光谱研究了PEO / TaS2层状纳米复合材料的费米能级附近的电子能带结构。采用剥离-吸附技术合成了PEO / TaS2层状纳米复合材料。 1T-,2H-和4Hb-TaS2单晶用作基质材料。 1T和4Hb-TaS2单晶的隧道光谱显示出清晰的电荷密度波(CDW)结构。 CDW间隙消失在PEO / IT-和PEO / 4Hb-TaS2纳米复合材料的隧穿光谱中。发现PEO / 1T-TaS2和PEO / 4Hb-TaS2纳米复合材料的电子能带结构为金属,而PEO / 2H-TaS2纳米复合材料的电子能带结构为带隙大的半导体。 (c)2006 Elsevier Ltd.保留所有权利。

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