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首页> 外文期刊>Chemistry of Materials: A Publication of the American Chemistry Society >Control of the Area Density of Vertically Grown ZnO Nanowires by Blending PS-b-P4VP and PS-b-PAA Copolymer Micelles
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Control of the Area Density of Vertically Grown ZnO Nanowires by Blending PS-b-P4VP and PS-b-PAA Copolymer Micelles

机译:通过混合PS-b-P4VP和PS-b-PAA共聚物胶束控制垂直生长的ZnO纳米线的面积密度

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摘要

We develop a novel and simple method for controlling the area density of ZnO nanowires vertically grown on a Si substrate. The method is based on blending spherical polystyrene-block-poly(acrylic acid) (PS-b-PAA) micelles with polystyrene-block-poly 4-vinylpyridine (PS-b-P4VP) for the area density control of Au nanoparticles, a catalyst of ZnO nanowires, chemically reduced from hydrogen tetrachloroaurate (HAuCl4) selectively in P4VP core block. No interdiffusion between the two types of block copolymer micelles allows us to fabricate the monolayer of the mixed micelles with the controlled density of Au nanoparticles from which single crystal ZnO nanowires are grown by the VLS method. The number of ZnO nanowires per unit area varies from approximately 15—120 μm~(-2) with a tuning capability of more than 800%. Micropatterns with the controlled density of Au nanoparticles are also fabricated by selective pattern transfer of blended micelles.
机译:我们开发了一种新颖而简单的方法来控制在Si衬底上垂直生长的ZnO纳米线的面积密度。该方法基于将球形聚苯乙烯嵌段聚丙烯酸(PS-b-PAA)胶束与聚苯乙烯嵌段聚4-乙烯基吡啶(PS-b-P4VP)混合以控制Au纳米颗粒的面积密度, ZnO纳米线的催化剂,在P4VP核心嵌段中选择性地从四氯金酸氢盐(HAuCl4)化学还原。两种类型的嵌段共聚物胶束之间没有相互扩散,这使得我们无法制造具有可控密度的Au纳米颗粒的混合胶束单层,通过VLS方法从中生长出单晶ZnO纳米线。每单位面积的ZnO纳米线的数量大约在15-120μm〜(-2)之间,调谐能力超过800%。还通过选择性地转移混合胶束的图案来制造具有受控密度的Au纳米粒子的微图案。

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