Partially fluorinated, polyhedral oligomeric silsesquioxane- functionalized (meth)acrylate resists for 193 nm bilayer lithography

摘要

The influence of partial fluorination on the lithographic performance of photoresists based on ( meth)acrylate terpolymers containing polyhedral oligomeric silsesquioxane (POSS) pendant groups is investigated in bilayer schemes for 193 nm lithography. For the first time the capability of POSS-functionalized resists for standard lithographic processing, including use of standard developer (0.26 N tetramethylammonium hydroxide) and industrial processing equipment is demonstrated. The optimized resists formulated exhibited high sensitivity (< 10 mJ/cm(2)) and potential for resolution performance comparable to mature 193 nm materials. The role of the fluorinated acid as a component in the terpolymer composition was crucial to the homogeneity of the resist material and its lithographic performance. Also, a photoacid generator (PAG) study revealed that the use of a highly hydrophobic PAG containing organic anion with a long fluorinated chain in the resist formulation improved further the homogeneity of the material and its lithographic performance. The adhesion of the highly fluorinated materials to the substrate is influenced by the type of polymeric underlayer used, whereas best results were obtained on a hard baked novolac polymer.