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首页> 外文期刊>The International Journal of Advanced Manufacturing Technology >Deformations of a simplified flip chip structure under thermal testing inspected using a real-time Moire technique
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Deformations of a simplified flip chip structure under thermal testing inspected using a real-time Moire technique

机译:使用实时云纹技术检查的经过简化的热测试下的倒装芯片结构的变形

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摘要

Deformations of a Si-epoxy-FR4 (simplified flip chip) structure under thermal testing were inspected with a real-time Moire technique. Specimens without cracks and specimens with a crack at the silicon-epoxy interface were prepared. The measurement results showed that the maximum deformation appeared at the edge. When the specimen was cooled to 20℃, there was residual plastic deformation in the specimen. The creep effect was more dominant in the FR4-epoxy interface. Upon cooling to 20℃, the specimen experienced partial strain recovery. To characterize the behavior of the interfacial crack, stress intensity factors K{sub}I and K{sub}(II), and the strain energy release rate G in the vicinity of the crack tip were calculated using the measured deformations to conduct a quantitative study. It was observed that a sharp strain gradient occurred at the crack tip. K{sub}I and K{sub}(II) were dependent on temperature, and G was dominated by K{sub}I for the interfacial crack in the specimen.
机译:使用实时摩尔纹技术检查了在热测试下Si-环氧-FR4(简化的倒装芯片)结构的变形。制备没有裂纹的样品和在硅-环氧树脂界面上具有裂纹的样品。测量结果表明,最大变形出现在边缘。当样品冷却至20℃时,样品中会残留塑性变形。蠕变效应在FR4-环氧树脂界面中更为明显。冷却至20℃后,试样经历了部分应变恢复。为了表征界面裂纹的行为,使用测得的变形来计算应力强度因子K {sub} I和K {sub}(II),以及裂纹尖端附近的应变能释放速率G,以进行定量分析。研究。观察到在裂纹尖端出现了急剧的应变梯度。 K {sub} I和K {sub}(II)取决于温度,而G则由K {sub} I决定了试样的界面裂纹。

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