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首页> 外文期刊>The European physical journal. Applied physics >Synthesis and characterization of In2S3: Na thin films prepared by vacuum thermal evaporation technique for photovoltaic applications
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Synthesis and characterization of In2S3: Na thin films prepared by vacuum thermal evaporation technique for photovoltaic applications

机译:真空热蒸发技术制备的In2S3:Na薄膜的合成与表征

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In2S3 thin films containing different quantities of sodium have been synthesized by coevaporation of sodium and In2S3 powder from separate sources using vacuum thermal evaporation method. Films were deposited on ordinary glass at 240 degrees C. The process of incorporation of sodium was studied as function of at.% Na. Films have been characterised by means of X-ray diffraction, SEM, EDAX and spectrophotometry. X-ray diffraction analysis confirmed the initial amorphous nature of deposited layers and revealed the formation of In2S3 as function of annealing layers containing sodium in nitrogen at 300 degrees C for 2 h. Energy Dispersive X-ray Analysis (EDAX) revealed the composition of the films as a function of the sodium incorporation. Surface Electron Microscopy showed that these films were granular and homogenous. The films have an n-type electrical conductivity and their optical direct band gap can be managed between 2.20 and 2.45 eV by controlling their sodium content. The variation of parameters for as-deposited and annealed films has been studied within x <= 4 at.% solid solution composition. Thin layers with homogeneous surfaces, direct band gap energy (E-g) of about 2.45 eV for 4 at.% Na and 0.9 mu m-thick have been achieved.
机译:通过使用真空热蒸发法从不同来源共蒸发钠和In2S3粉末,已合成了含有不同钠含量的In2S3薄膜。薄膜在240摄氏度的温度下沉积在普通玻璃上。研究了钠的掺入过程与钠含量的关系。通过X射线衍射,SEM,EDAX和分光光度法对薄膜进行了表征。 X射线衍射分析证实了沉积层的初始无定形性质,并揭示了In2S3的形成与退火层的关系,该退火层的作用是在300°C的氮气中退火2 h。能量色散X射线分析(EDAX)显示了膜的组成与钠结合的函数。表面电子显微镜显示这些膜是颗粒状且均质的。薄膜具有n型导电性,可以通过控制钠含量将其光学直接带隙控制在2.20和2.45 eV之间。已经研究了在x <= 4 at。%固溶体组成范围内沉积和退火薄膜的参数变化。已经获得了具有均匀表面的薄层,对于4%的Na和0.9μm的厚度,直接带隙能(E-g)约为2.45 eV。

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