Theoretical Modeling for Optical Properties of a Si Delta-Doped InGaN/GaN Quantum Well

摘要

By means of a self-consistent numerical method we have analyzed the effect of a Si δ-doped GaN barrier on the electrical and optical properties of an In_(0.05)Ga_(0.95)N/GaN single quantum well (SQW). Our theoretical study about four samples with UV emission of 374 nm shows: (1) there is a considerable concentration of free electrons, as well as a higher energy for intersubband transitions in the samples with their delta layers located in the range 8 and 12 nm away from the InGaN QW, (2) the emission intensity depends on the position of the delta-doped layer with their peaks fitted by a Gaussian function. The theoretical results are compatible with the experimental data reported in the literature in 2007 by Kwon et al.