Long-Term Stability of Long-Wavelength (>1.25 μm) Quantum-Dot Lasers Fabricated on GaAs Substrates

摘要

Accelerated degradation testing of long-wavelength (>1.25 μm) quantum-dot lasers made on GaAs substrates is carried out at a fixed current of 1.7 A, initial optical output of about 0.3 W, and a heat sink temperature of 60 ℃. No signs of degradation are revealed after testing for 450 h. The test bed is not sealed, inert gas purging is not performed, and the laser faces are not passivated.