Self-organization during deposition of semiconductor films in the atmosphere of atomic hydrogen

摘要

A scanning tunneling microscope is used to establish that nanostructures with characteristic dimension 30-40 nm are contained in germanium films deposited on copper substrates in an atmosphere of atomic hydrogen. Local conductance, photoconductivity, and nonequilibrium chemiconduction of the films are studied. Etching of germanium and silicon films and also of fullerene soot by atomic hydrogen is observed. (C) 2004 MAIK "Nauka / Interperiodica".