Well-behaved metal-oxide-semiconductor capacitor characteristics of hafnium silicate films deposited in an atomic layer deposition mode by vapor-liquid hybrid deposition process

摘要

We report electrical properties of hafnium silicate films prepared in an atomic layer deposition mode using Hf(O~(t)C_(4)H_(9))_(4) and Si(OC_(2)H_(5))_(4) precursors. Film deposition was carried out at room temperature using the vapor-liquid hybrid deposition technique. The C-V curve of the metal-oxide-semiconductor capacitor fabricated by postdeposition anneal and Au electrode evaporation shows good agreement with the theoretical one except for a positive flatband voltage shift of 0.2-0.3 V. The leakage current density was four orders of magnitude lower than SiO_(2) reference data in the equivalent-oxide-thickness range of <2.5 nm.