Fabrication of quasi-superlattices at the interface between 3C-SiC epitaxial layer and substrates of hexagonal SiC polytypes by sublimation epitaxy in vacuum

摘要

Transmission electron microscopy has been used to study the structure of a transition layer between a hexagonal substrate (6H-SiC and 4H-SiC) and a cubic silicon carbide layer grown by sublimation epitaxy in vacuum. It is shown by microdiffraction analysis that the transition layer with a thickness of 210 nm is constituted by alternating layers of cubic (3C) and hexagonal (6H) silicon carbide. It is demonstrated that 6H-SiC/3C-SiC and 4H-SiC/3C-SiC quasi-superlattices can be produced by this method.